050-5514 rev d 3 - 2010 absolute maximum ratings all ratings: t c = 25c unless otherwise speci ed. symbol parameter ratings unit v dss drain source voltage 200 volts i d continuous drain current @ t c = 25c 56 amps i dm pulsed drain current 1 224 v gs gate-source voltage continuous 30 volts v gsm gate-source voltage transient 40 p d total power dissipation @ t c = 25c 300 watts linear derating factor 2.4 w/c t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for soldering: 0.063" from case for 10 seconds 300 i ar avalanche current 1 (repetitive and non-repatitive) 56 amps e ar repetitive avalanche energy 1 30 mj e as single pulse avalanche energy 4 1300 features ? faster switching ? lower leakage ? 100% avalanche tested ? popular to-247 package ? rohs compliant 200v, 56a, 0.045 apt20m45bvr(g) power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increase packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. microsemi website - http://www.microsemi.com power mos v ? static characteristics t j = 25c unless otherwise speci ed symbol parameter min typ max unit bv dss drain-source breakdown voltage (v gs = 0v, i d = 250 a) 200 volts i d(on) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) 56 amps r ds(on) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) 0.045 ohms i dss zero gate voltage drain current (v ds = v dss , v gs = 0v) 25 a zero gate voltage collector current (v gs = 0.8 v dss , v gs = 0v, t c = 125c) 250 i gss gate-source leakage current (v gs = 30v, v ds = 0v) 100 na v gs(th) gate threshold voltage (v ds = v gs , i d = 1.0ma) 2 4 volts to-247 d 3 apt20m45bvr(g) g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed.
050-5514 rev d 3 - 2010 dynamic characteristics apt20m45bvr(g) symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0 v v ds = 25v f = 1mhz 4050 4860 pf c oss output capacitance 980 1375 c rss reverse transfer capacitance 300 450 q g total gate charge 1 v gs = 10v v dd = 0.5v dss i d = i d[cont.] @ 25c 130 195 q ge gate-source charge 30 45 nc q gd gate- drain ("miller") charge 55 80 t d(on) turn-on delay time v gs = 10v v dd = 0.5v dss i d = i d[cont.] @ 25c r g = 1.6 12 24 ns t r rise time 14 28 t d(off) turn-off delay time 43 70 t f fall time 714 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 830 h, r g = 25 , peak i l = 56a 2 pulse test: pulse width < 380 s, duty cycle < 2% microsemi reserves the right to change, without notice, the speci cations and information contained herein. source-drain diode ratings and characteristics symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 56 amps i sm pulse source current 1 (body diode) 224 v sd diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) 1.3 volts t rr reverse recovery time (i s = -i d[cont.] , di s /dt = 100a/ s) 280 ns q rr) reverse recovery time (i s = -i d[cont.] , di s /dt = 100a/ s) 3.5 c symbol characteristic min typ max unit r jc junction to case 0.42 c /w r ja junction to ambient 40 thermal characteristics
050-5514 rev d 3 - 2010 typical performance curves apt20m45bvr(g)
050-5514 rev d 3 - 2010 typical performance curves apt20m45bvr(g) microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. e3 100% sn plated to-247 (b) package outline
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